eprintid: 16199
rev_number: 16
userid: 1291
dir: disk0/00/01/61/99
datestamp: 2012-11-12 15:12:04
lastmod: 2019-02-02 15:56:12
status_changed: 2012-11-12 15:12:04
type: article
metadata_visibility: show
item_issues_count: 0
eprint_status: archive
creators_name: Shen, TC
creators_name: Steckel, JA
creators_name: Jordan, KD
creators_email: 
creators_email: 
creators_email: jordan@pitt.edu
creators_id: 
creators_id: 
creators_id: JORDAN
title: Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface
ispublished: pub
divisions: sch_as_chemistry
full_text_status: public
abstract: Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1→2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1→2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1→2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.
date: 2000-02-10
date_type: published
publication: Surface Science
volume: 446
number: 3
pagerange: 211 - 218
refereed: TRUE
issn: 0039-6028
id_number: 10.1016/S0039-6028(99)01147-4
citation:   Shen, TC and Steckel, JA and Jordan, KD  (2000) Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface.  Surface Science, 446 (3).  211 - 218.  ISSN 0039-6028     
document_url: http://d-scholarship-dev.library.pitt.edu/16199/1/licence.txt