TY  - JOUR
ID  - pittir16199
UR  - http://d-scholarship-dev.library.pitt.edu/16199/
IS  - 3
A1  - Shen, TC
A1  - Steckel, JA
A1  - Jordan, KD
Y1  - 2000/02/10/
N2  - Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1?2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1?2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1?2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.
JF  - Surface Science
VL  - 446
SN  - 0039-6028
TI  - Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface
SP  - 211 
AV  - public
EP  -  218
ER  -