<> "The repository administrator has not yet configured an RDF license."^^ . <> . . . "Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface"^^ . "Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1→2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1→2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1→2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers."^^ . "2000-02-10" . . "446" . "3" . . "Surface Science"^^ . . . "00396028" . . . . . . . . . . . . . "TC"^^ . "Shen"^^ . "TC Shen"^^ . . "JA"^^ . "Steckel"^^ . "JA Steckel"^^ . . "KD"^^ . "Jordan"^^ . "KD Jordan"^^ . . . . . . "Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface (Plain Text)"^^ . . . "licence.txt"^^ . . . "Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface (Other)"^^ . . . . . . "indexcodes.txt"^^ . . "HTML Summary of #16199 \n\nElectron-stimulated bond rearrangements on the H/Si(100)-3×1 surface\n\n" . "text/html" . .