relation: http://d-scholarship-dev.library.pitt.edu/16199/
title: Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface
creator: Shen, TC
creator: Steckel, JA
creator: Jordan, KD
description: Rearrangements of the Si(100)-3×1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3×1→2×1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3×1 surface and the 3×1→2×1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3×1→2×1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.
date: 2000-02-10
type: Article
type: PeerReviewed
format: text/plain
language: en
rights: attached
identifier: http://d-scholarship-dev.library.pitt.edu/16199/1/licence.txt
identifier:   Shen, TC and Steckel, JA and Jordan, KD  (2000) Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface.  Surface Science, 446 (3).  211 - 218.  ISSN 0039-6028     
relation: 10.1016/S0039-6028(99)01147-4