@article{pittir16199,
          volume = {446},
          number = {3},
           month = {February},
          author = {TC Shen and JA Steckel and KD Jordan},
           title = {Electron-stimulated bond rearrangements on the H/Si(100)-3{$\times$}1 surface},
         journal = {Surface Science},
           pages = {211 -- 218},
            year = {2000},
             url = {http://d-scholarship-dev.library.pitt.edu/16199/},
        abstract = {Rearrangements of the Si(100)-3{$\times$}1:H surface induced by an STM tip at a positive sample bias are examined. Emphasis is placed on local 3{$\times$}1{$\rightarrow$}2{$\times$}1 restructuring of the surface following the loss of two H atoms. The H-atom desorption yield from monohydride sites of the 3{$\times$}1 surface and the 3{$\times$}1{$\rightarrow$}2{$\times$}1 transition yield induced by electronic excitation are presented. Based on electronic structure calculations, it is estimated that the 3{$\times$}1{$\rightarrow$}2{$\times$}1 rearrangement process has overall barriers ranging from 0.1 to 1.6 eV, depending on the sites from which the H atoms are lost. It is proposed that STM-induced vibrational excitation of surface bonds provides the energy for surmounting the rearrangement barriers.}
}